METASTABLE ANTISITE PAIR IN GaAs
نویسنده
چکیده
Metastable arsenic-antisite{gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable connguration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of infrared light in the metastable state. The results presented are in good agreement with recent experimental results for electron-irradiated GaAs.
منابع مشابه
AB INITIO STUDY OF NITROGEN ANTISITES IN GaN AND AlN
We present results of an ab initio study of the nitrogen antisite defect in GaN and AlN. We show that the neutral antisite in zinc-blende structure exhibits metastable behaviour similar to the arsenic antisite in GaAs, but in the wurtzite structure the phenomenon does not exist. A new discovery is that the negative charge states of the nitrogen antisite are stabilized by the large band gap. In ...
متن کاملOptical Properties of As-Antisite and EL 2 Defects in GaAs
This Letter reports the first application of an ESR-tagged magnetic circular dichroism measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as intracenter electronic transitions of the As-antisite defect. The analysis of the absorption and concentration data implies that the ...
متن کاملA critical look at EL2 models
2014 A critical discussion of the experimental observations made on the EL2 defect in GaAs is made which allows us to conclude that the most probable configuration of this defect is the As antisite-As interstitial pair. Revue Phys. Appl. 23 (1988) 863-869 MAI 1988,
متن کاملDirect Antisite Formation in Electron Irradiation of GaAs.
Rights: © 1995 American Physical Society (APS). This is the accepted version of the following article: Mattila, T. & Nieminen, Risto M. 1995. Direct Antisite Formation in Electron Irradiation of GaAs. Physical Review Letters. Volume 74, Issue 14. 2721-2724. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.74.2721, which has been published in final form at http://journals.aps.org/prl/abstract/...
متن کاملMeV ion damage in GaAs single crystals: Strain saturation and role of nuclear and electronic collisions in defect production.
We have reported previously that the perpendicular strain produced in the surface layer (several ~ thick) of GaAs (100) crystals under MeV ion irradiation saturates at ""0. 47. regardless of the doping of the specimen, and that the parallel strain is zero within the experimental error. ~n this paper, the perpendicular strain in GaAs (111) and GaAs (110) crystals saturates at 'V0.3%. The ionizat...
متن کامل